Postgrowth Control of the Quantum-Well Band Edge for the Monolithic Integration of Widely Tunable Lasers and Electroabsorption Modulators
نویسندگان
چکیده
We describe a quantum well intermixing process for the monolithic integration of various devices, each with a unique band edge. The process involves a single ion implant followed by multiple etch and anneal cycles. We have applied this method to design and fabricate widely-tunable sampledgrating DBR lasers with integrated electroabsorption modulators. The devices employ three unique band edges, and demonstrate exceptional tuning, gain, and absorption characteristics.
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